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SI1065X-T1-GE3 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI1065X-T1-GE3 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 74320 S-80641-Rev. B, 24-Mar-08 Vishay Siliconix Si1065X New Product TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.01 0.1 1 10 0 0.2 0.6 0.8 1 0.4 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) RDS(on) vs. VGS vs. Temperature BVDSS vs. Temparture 0.00 0.06 0.12 0.18 0.24 012345 VGS - Gate-to-Source Voltage (V) TA TA = 25 °C ID = 1.09 A = 125 °C Temperature (°C) - 14 - 13.5 - 13 - 12.5 - 12 - 50 - 25 0 25 50 75 100 125 150 Safe Operating Area, Junction-to-Ambient 0.001 0.01 0.1 1 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified BVDSS Limited TA = 25 °C Limited by RDS(on)* DC 1 s 10 s 100 ms 10 ms 1 ms Single Pulse |
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