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SI3407DV 데이터시트(PDF) 4 Page - Vishay Siliconix |
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SI3407DV 데이터시트(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 69987 S-80673-Rev. A, 31-Mar-08 Vishay Siliconix Si3407DV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage VSD -Source-to-Drain Voltage (V) 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 150 °C TJ = 25 °C 0.5 0.7 0.9 1.1 1.3 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.01 0.02 0.03 0.04 036 9 12 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =7.5 A 0 10 20 30 40 0.01 0.1 1 10 100 1000 Time(s) Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 ms 100 ms 1s,10s DC Limited byRDS(on)* BVDSS Limited 1ms 100 µs |
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