SI3442BDV datasheet(2/5 Pages) VISHAY

부품명	SI3442BDV

상세설명	N-Channel 2.5-V (G-S) MOSFET

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Document Number: 72504

S-71947-Rev. D, 10-Sep-07

Vishay Siliconix

Si3442BDV

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 70 °C

5

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

10

A

VDS = 5 V, VGS = 2.5 V

4

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 4 A

0.045

0.057

Ω

VGS = 2.5 V, ID = 3.4 A

0.070

0.090

Forward Transconductancea

gfs

VDS = 10 V, ID = 4.0 A

11.3

S

Diode Forward Voltagea

VSD

IS = 1.6 A, VGS = 0 V

0.75

1.2

V

Dynamicb

Input Capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

295

pF

Output Capacitance

Coss

75

Reverse Transfer Capacitance

Crss

45

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 4.0 A

35

nC

Gate-Source Charge

Qgs

0.65

Gate-Drain Charge

Qgd

0.95

Gate Resistance

Rg

f = 1 MHz

2.7

Ω

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 10 Ω

ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω

35

55

ns

Rise Time

tr

50

75

Turn-Off Delay Time

td(off)

20

30

Fall Time

tf

15

25

Source-Drain Reverse Recovery Time

trr

IF = 1.6 A, di/dt = 100 A/µs

30

60

Output Characteristics

0

4

8

12

16

20

0

1234

5

VGS = 5 thru 3.5 V

2.5 V

VDS - Drain-to-Source Voltage (V)

3 V

2 V

1.5 V

Transfer Characteristics

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TC = - 55 °C

125 °C

25 °C

VGS - Gate-to-Source Voltage (V)

유사한 부품 번호 - SI3442BDV

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI3442BDV	61Kb / 4P	N-Channel 2.5-V (G-S) MOSFET Rev. C, 15-Mar-04
	SI3442BDV	183Kb / 9P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09
	SI3442BDV	185Kb / 9P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09
	Si3442BDV	189Kb / 9P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09
	SI3442BDV	208Kb / 9P	N-Channel 2.5-V (G-S) MOSFETs 01-Jan-2022

More results

유사한 설명 - SI3442BDV

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI9428DY	38Kb / 4P	N-Channel 2.5-V (G-S) MOSFET Rev. C, 26-May-03
	SI5404DC	66Kb / 4P	N-Channel 2.5-V (G-S) MOSFET Rev. C, 13-Oct-03
	SI5406DC	98Kb / 4P	N-Channel 2.5-V (G-S) MOSFET Rev. B, 05-Aug-02
Guangdong Kexin Industr...	KI5404BDC	63Kb / 2P	N-Channel 2.5-V (G-S) MOSFET
Vishay Siliconix	SI3442BDV	189Kb / 9P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09
	SI9426DY	39Kb / 4P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 26-May-03
	SI4466DY-T1-E3	230Kb / 8P	N-Channel 2.5-V (G-S) MOSFET Rev. F, 04-May-09
	SI6466ADQ	81Kb / 5P	N-Channel 2.5-V (G-S) MOSFET Rev. B, 18-Aug-03
	SI3442BDV-T1-GE3	185Kb / 9P	N-Channel 2.5-V (G-S) MOSFET Rev. E, 12-Oct-09
Guangdong Kexin Industr...	KI5406DC	62Kb / 2P	N-Channel 2.5-V (G-S) MOSFET
Vishay Siliconix	SI3446DV	91Kb / 5P	N-Channel 2.5-V (G-S) MOSFET Rev. C, 01-Aug-05

More results

SI3442BDV 데이터시트(PDF) 2 Page - Vishay Siliconix

SI3442BDV 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI3442BDV

유사한 설명 - SI3442BDV

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