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SI3441BDV-T1-E3 데이터시트(PDF) 3 Page - Vishay Siliconix |
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SI3441BDV-T1-E3 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Si3441BDV Vishay Siliconix Document Number: 72028 S-40424—Rev. C, 15-Mar-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 200 400 600 800 1000 04 8 12 16 20 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 −50 −25 0 25 50 75 100 125 150 0 1 2 3 4 5 0 123 456 0.00 0.06 0.12 0.18 0.24 0.30 04 8 12 16 20 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 3.3 A ID − Drain Current (A) VGS = 4.5 V ID = 3.3 A Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.00 0.06 0.12 0.18 0.24 0.30 0 1234 5 TJ = 150_C ID = 3.3 A 20 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) TJ = 25_C VGS = 2.5 V VGS = 4.5 V |
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