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SI4310BDY-E3 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI4310BDY-E3 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 10 page FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D DC/DC Converters − Game Stations − Video Equipment Si4310BDY Vishay Siliconix New Product Document Number: 73064 S-41530—Rev. A, 16-Aug-04 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Channel 1 0.011 @ VGS = 10 V 10 Channel-1 30 0.016 @ VGS = 4.5 V 8.2 Channel 2 30 0.0085 @ VGS = 10 V 14 Channel-2 0.0095 @ VGS = 4.5 V 13 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A 2.0 D1 S1 D1 S1 G1 D2 G2 D2 SO-14 11 12 13 14 Top View 2 3 4 1 G2 S2 G1 S1 D1 D2 N-Channel 2 MOSFET N-Channel 1 MOSFET Schottky Diode S2 D2 S2 D2 S2 D2 8 9 10 5 6 7 Ordering Information: Si4310BDY—E3 Si4310BDY-T1—E3 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Channel-2 Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 10 7.5 14 9.8 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 8 6 11 7.8 A Pulsed Drain Current IDM 40 50 A Continuous Source Current (Diode Conduction)a IS 1.8 1.04 2.73 1.33 Maximum Power Dissipationa TA = 25_C PD 2 1.14 3.0 1.47 W Maximum Power Dissipationa TA = 70_C PD 1.28 0.73 1.9 0.94 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Schottky Parameter Symbol Typ Max Typ Max Typ Max Unit Mi J ti t A bi ta t v 10 sec R 53 62.5 34 35 40 48 Maximum Junction-to-Ambienta Steady-State RthJA 92 110 70 72 76 93 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 35 42 17 24 21 26 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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