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SI4310BDY-T1-E3 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SI4310BDY-T1-E3 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 10 page Si4310BDY Vishay Siliconix New Product www.vishay.com 2 Document Number: 73064 S-41530—Rev. A, 16-Aug-04 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS( h) VDS = VGS ID = 250 mA Ch-1 1.0 3.0 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA Ch-2 1.0 3.0 V Gate Body Leakage IGSS VDS = 0 V VGS = "20 V Ch-1 100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Ch-2 100 nA VDS = 30 V VGS = 0 V Ch-1 1 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-2 100 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V VGS = 0 V TJ = 85_C Ch-1 15 mA VDS = 30 V, VGS = 0 V, TJ = 85_C Ch-2 4000 On State Drain Currentb ID( ) VDS = 5 V VGS = 10 V Ch-1 20 A On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V Ch-2 30 A VGS = 10 V, ID = 10 A Ch-1 0.009 0.011 Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 14 A Ch-2 0.0065 0.0085 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 8.2 A Ch-1 0.013 0.016 W VGS = 4.5 V, ID = 13 A Ch-2 0.0075 0.0095 Forward Transconductanceb gf VDS = 15 V, ID = 10 A Ch-1 30 S Forward Transconductanceb gfs VDS = 15 V, ID = 14 A Ch-2 60 S Diode Forward Voltageb VSD IS = 1.8 A, VGS = 0 V Ch-1 0.76 1.1 V Diode Forward Voltageb VSD IS = 2.73 A, VGS = 0 V Ch-2 0.485 0.53 V Dynamica Input Capacitance Ci Ch-1 790 1580 2370 Input Capacitance Ciss Ch-2 1530 3060 4590 Output Capacitance C VDS = 15 V VGS = 0 V f= 1 MHz Ch-1 145 290 435 pF Output Capacitance Coss VDS = 15 V, VGS = 0 V, f= 1 MHz Ch-2 300 600 900 pF Reverse Transfer Capacitance C Ch-1 70 140 210 Reverse Transfer Capacitance Crss Ch-2 115 225 340 Total Gate Charge Q Ch-1 12 18 Total Gate Charge Qg Channel-1 Ch-2 19 30 Gate Source Charge Q Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 10 A Ch-1 5.3 nC Gate-Source Charge Qgs Channel-2 V 1 V V V I 1 A Ch-2 10 nC Gate Drain Charge Q d Channel 2 VDS = 15 V, VGS = 4.5 V, ID = 14 A Ch-1 4.3 Gate-Drain Charge Qgd Ch-2 5 Gate Resistance R f = 1 MHz Ch-1 0.90 1.8 2,7 W Gate Resistance Rg f = 1 MHz Ch-2 0.3 0.95 1.4 W Turn On Delay Time td( ) Ch-1 13 20 Turn-On Delay Time td(on) Channel 1 Ch-2 17 26 Rise Time t Channel-1 VDD = 15 V, RL = 15 W Ch-1 10 15 Rise Time tr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-2 12 20 Turn Off Delay Time td( ff) Channel-2 V 1 V R 1 W Ch-1 33 50 ns Turn-Off Delay Time td(off) Channel 2 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-2 53 80 ns Fall Time tf ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-1 10 15 Fall Time tf Ch-2 17 26 Source Drain Reverse Recovery Time t IF = 1.8 A, di/dt = 100 A/ms Ch-1 25 40 Source-Drain Reverse Recovery Time trr IF = 2.73 A, di/dt = 100 mA/ms Ch-2 31 50 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. |
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