SI5853DDC-T1-E3 datasheet(5/10 Pages) VISHAY

부품명	SI5853DDC-T1-E3

상세설명	P-Channel 20-V (D-S) MOSFET with Schottky Diode

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제조업체	VISHAY [Vishay Siliconix]

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5 / 10 page

Document Number: 68979

S-82583-Rev. A, 27-Oct-08

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5

Vishay Siliconix

Si5853DDC

New Product

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

10

1

100

TJ = 25 °C

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

0.3

0.4

0.5

0.6

0.7

0.8

0.9

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.0

0.1

0.2

0.3

0.4

0

1

234

5

TJ =25 °C

TJ = 125 °C

ID = 2.9 A

VGS - Gate-to-Source Voltage (V)

0

4

8

12

16

Time (s)

10

1000

0.1

0.01

0.001

100

1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

10 s, 1 s

Limited byRDS(on)*

BVDSS Limited

1ms

100 µs

10 ms

100 ms

DC

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

유사한 부품 번호 - SI5853DDC-T1-E3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI5853DC	122Kb / 6P	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. B, 05-Aug-02
	SI5853DC-T1	122Kb / 6P	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. B, 05-Aug-02
	SI5853DC-T1-E3	180Kb / 9P	P-Channel 1.8 V (G-S) MOSFET with Schottky Diode Rev. D, 08-Mar-10

More results

유사한 설명 - SI5853DDC-T1-E3

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI3853DV	71Kb / 6P	P-Channel 20-V (D-S) MOSFET With Schottky Diode Rev. A, 04-Oct-99
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	SI4829DY	110Kb / 10P	P-Channel 20-V (D-S) MOSFET with Schottky Diode Rev. B, 12-Oct-09
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Vishay Siliconix	SI5857DU	136Kb / 10P	P-Channel 20-V (D-S) MOSFET With Schottky Diode Rev. C, 23-Jun-08
Vishay Siliconix	SI4823DY	287Kb / 12P	P-Channel 20 V (D-S) MOSFET with Schottky Diode Rev. C, 03-May-10

More results

SI5853DDC-T1-E3 데이터시트(PDF) 5 Page - Vishay Siliconix

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유사한 부품 번호 - SI5853DDC-T1-E3

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