BAS16WS-V-GS08 datasheet(2/5 Pages) VISHAY

부품명	BAS16WS-V-GS08

상세설명	Small Signal Fast Switching Diode

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Document Number 85752

Rev. 1.7, 30-Apr-08

BAS16WS-V

Vishay Semiconductors

For technical support, please contact: Diodes-SSP@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 1 mA

VF

715

mV

IF = 10 mA

VF

855

mV

IF = 50 mA

VF

1000

mV

IF = 150 mA

VF

1250

mV

Leakage current

VR = 25 V, TJ = 150 °C

IR

30

µA

VR = 75 V

IR

1µA

VR = 75 V, TJ = 150 °C

IR

50

µA

Diode capacitance

VR = 0; f = 1 MHz

CD

2pF

Reverse recovery time

IF = 10 mA to IR = 10 mA,

IR = 1 mA, RL = 100 Ω

trr

6ns

Figure 1. Forward Characteristics

Figure 2. Dynamic Forward Resistance vs. Forward Current

18105

VF (V)

T

j = 100 °C

T

j = 25 °C

10- 2

10- 1

102

103

1

10

12

0

17438

f = 1 kHz

T

j = 25 °C

IF (mA)

10

102

103

104

10-2

10-1

1102

10

2

5

2

5

2

5

2

5

Figure 3. Admissible Power Dissipation vs. Ambient Temperature

Figure 4. Relative Capacitance vs. Reverse Voltage

18185

Tamb (°C)

0

100

400

500

200

300

100

200

0

17440

VR (V)

0.7

0.8

0.9

1.0

1.1

f = 1 MHz

T

j = 25 °C

2

0

8

6

410

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