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SUD50P10-43L 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SUD50P10-43L
상세설명  P-Channel 100-V (D-S) 175 °C MOSFET
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Document Number: 73444
S-71660-Rev. B, 06-Aug-07
Vishay Siliconix
SUD50P10-43L
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 100
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 109
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
5.9
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1
- 3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 100 V, VGS = 0 V
- 1
µA
VDS = - 100 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = - 10 V
- 40
A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 10 V, ID = - 9.2 A
0.036
0.043
Ω
VGS = - 4.5 V, ID = - 7.7 A
0.040
0.048
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 9.2 A
38
S
Dynamicb
Input Capacitance
Ciss
VDS = - 50 V, VGS = 0 V, f = 1 MHz
4600
pF
Output Capacitance
Coss
230
Reverse Transfer Capacitance
Crss
175
Total Gate Charge
Qg
VDS = - 50 V, VGS = - 10 V, ID = - 9.2 A
106
160
nC
VDS = - 50 V, VGS = - 4.5 V, ID = - 9.2 A
54
81
Gate-Source Charge
Qgs
14
Gate-Drain Charge
Qgd
26
Gate Resistance
Rg
f = 1 MHz
4
Ω
Turn-On Delay Time
td(on)
VDD = - 50 V, RL = 6.5 Ω
ID ≅ - 7.7 A, VGEN = - 10 V, Rg = 1 Ω
15
25
ns
Rise Time
tr
20
30
Turn-Off Delay Time
td(off)
110
165
Fall Time
tf
100
150
Turn-On Delay Time
td(on)
VDD = - 50 V, RL = 6.5 Ω
ID ≅ - 7.7 A, VGEN = - 4.5 V, Rg = 1 Ω
42
65
ns
Rise Time
tr
160
240
Turn-Off Delay Time
td(off)
100
150
Fall Time
tf
100
150
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 50
A
Pulse Diode Forward Currenta
ISM
- 40
Body Diode Voltage
VSD
IS = - 7.7 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 7.7 A, di/dt = 100 A/µs, TJ = 25 °C
60
90
ns
Body Diode Reverse Recovery Charge
Qrr
150
225
nC
Reverse Recovery Fall Time
ta
46
ns
Reverse Recovery Rise Time
tb
14


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