전자부품 데이터시트 검색엔진 |
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HVV1214-100 데이터시트(PDF) 2 Page - HVVi Semiconductors, Inc. |
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HVV1214-100 데이터시트(HTML) 2 Page - HVVi Semiconductors, Inc. |
2 / 5 page TM HVV1214-100 HigH Voltage, HigH Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS06A 12/11/08 2 eleCtRiCal CHaRaCteRistiCs Pulse CHaRaCteRistiCs tHeRMal PeRFoRManCe Ruggedness PeRFoRManCe HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS06A 10235 S. 51 st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty For Ground Based Radar Applications 1.) NOTE: All parameters measured under pulsed conditions at 120W output power measured at the 5% point of the pulse with pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. RUGGEDNESS PERFORMANCE THERMAL PERFORMANCE PULSE CHARACTERISTICS ELECTRICAL CHARACTERISTICS HVVi Semiconductors, Inc. ISO 9001:2000 Certified EG-01-DS06A 10235 S. 51 st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/12/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty For Ground Based Radar Applications 1.) NOTE: All parameters measured under pulsed conditions at 120W output power measured at the 5% point of the pulse with pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. RUGGEDNESS PERFORMANCE THERMAL PERFORMANCE PULSE CHARACTERISTICS ELECTRICAL CHARACTERISTICS The HVV1214-100 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power and nominal operating voltage across the frequency band of operation. 1 NOTE: : All parameters measured under pulsed conditions at 120W output power measured at the 5% point of the pulse with pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2 NOTE: Amount of gate voltage required to attain nominal quiescent current. Symbol Parameter Conditions Min Typical Max Unit VBR(DSS) Drain-Source Breakdown VGS=0V,ID=5mA 95 102 - V IDSS Drain Leakage Current VGS=0V,VDS=50V - 50 200 µA IGSS Gate Leakage Current VGS=5V,VDS=0V - 1 5 µA GP1 Power Gain F=1400MHz 18 20 - dB IRL1 Input Return Loss F=1400MHz - -8 -5 dB ηD1 Drain Efficiency F=1400MHz 43 45 - % VGS(Q)2 Gate Quiescent Voltage VDD=50V,IDQ=100mA 1.1 1.45 1.8 V VTH Threshold Voltage VDD=5V, ID=300µA 0.7 1.2 1.7 V Symbol Parameter Conditions Min Typical Max Unit Tr1 Rise Time F=1400MHz - <25 50 nS Tf1 Fall Time F=1400MHz - <15 50 nS PD1 Pulse Droop F=1400MHz - 0.35 0.5 dB |
유사한 부품 번호 - HVV1214-100 |
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유사한 설명 - HVV1214-100 |
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