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HVV1214-100 데이터시트(PDF) 2 Page - HVVi Semiconductors, Inc.

부품명 HVV1214-100
상세설명  L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty For Ground Based Radar Applications
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제조업체  HVVI [HVVi Semiconductors, Inc.]
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TM
HVV1214-100 HigH Voltage, HigH Ruggedness
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200μs Pulse, 10% Duty
For Ground Based Radar Applications
The innovative Semiconductor Company!
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A
12/11/08
2
eleCtRiCal CHaRaCteRistiCs
Pulse CHaRaCteRistiCs
tHeRMal PeRFoRManCe
Ruggedness PeRFoRManCe
HVVi Semiconductors, Inc.
ISO 9001:2000 Certified
EG-01-DS06A
10235 S. 51
st St. Suite 100
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
12/12/08
Phoenix, Az. 85044
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
2
HVV1214-100 High Voltage, High Ruggedness
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty
For Ground Based Radar Applications
          


1.) NOTE: All parameters measured under pulsed conditions at 120W output power
measured at the 5% point of the pulse with pulse width = 200µsec, duty cycle = 10%
and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
































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
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




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

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


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

















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







 






  









RUGGEDNESS PERFORMANCE
THERMAL PERFORMANCE
PULSE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
HVVi Semiconductors, Inc.
ISO 9001:2000 Certified
EG-01-DS06A
10235 S. 51
st St. Suite 100
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
12/12/08
Phoenix, Az. 85044
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
2
HVV1214-100 High Voltage, High Ruggedness
L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200µs Pulse, 10% Duty
For Ground Based Radar Applications
          


1.) NOTE: All parameters measured under pulsed conditions at 120W output power
measured at the 5% point of the pulse with pulse width = 200µsec, duty cycle = 10%
and VDD = 50V, IDQ = 100mA in a broadband matched test fixture.
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.























































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

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
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
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























 






  









RUGGEDNESS PERFORMANCE
THERMAL PERFORMANCE
PULSE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
The HVV1214-100 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR
at rated output power and nominal operating voltage across the frequency band of operation.
1
NOTE: : All parameters measured under pulsed conditions at 120W output power measured at the
5% point of the pulse with pulse width = 200µsec, duty cycle = 10% and VDD = 50V, IDQ = 100mA in a
broadband matched test fixture.
2
NOTE: Amount of gate voltage required to attain nominal quiescent current.
Symbol Parameter
Conditions
Min
Typical Max
Unit
VBR(DSS)
Drain-Source Breakdown VGS=0V,ID=5mA
95
102
-
V
IDSS
Drain Leakage Current
VGS=0V,VDS=50V
-
50
200
µA
IGSS
Gate Leakage Current
VGS=5V,VDS=0V
-
1
5
µA
GP1
Power Gain
F=1400MHz
18
20
-
dB
IRL1
Input Return Loss
F=1400MHz
-
-8
-5
dB
ηD1
Drain Efficiency
F=1400MHz
43
45
-
%
VGS(Q)2 Gate Quiescent Voltage
VDD=50V,IDQ=100mA
1.1
1.45
1.8
V
VTH
Threshold Voltage
VDD=5V, ID=300µA
0.7
1.2
1.7
V
Symbol Parameter
Conditions
Min
Typical Max
Unit
Tr1
Rise Time
F=1400MHz
-
<25
50
nS
Tf1
Fall Time
F=1400MHz
-
<15
50
nS
PD1
Pulse Droop
F=1400MHz
-
0.35
0.5
dB


유사한 부품 번호 - HVV1214-100

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   All Gold Bonding Scheme
HVV1214-140-EK ASI-HVV1214-140-EK Datasheet
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유사한 설명 - HVV1214-100

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HVVi Semiconductors, In...
HVV1214-025 HVVI-HVV1214-025 Datasheet
677Kb / 2P
   L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty for Ground Based Radar Applications
HVV1214-075 HVVI-HVV1214-075 Datasheet
512Kb / 2P
   L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty for Ground Based Radar Applications
HVV1214-025S HVVI-HVV1214-025S Datasheet
225Kb / 2P
   L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200關s Pulse, 10% Duty
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Microsemi Corporation
1214-800P MICROSEMI-1214-800P Datasheet
83Kb / 2P
   800 Watts - 300關s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
1214-550P MICROSEMI-1214-550P Datasheet
84Kb / 2P
   550 Watts - 300關s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
1214-700P MICROSEMI-1214-700P Datasheet
83Kb / 2P
   700 Watts - 300關s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
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Tyco Electronics
PH2226-110M MACOM-PH2226-110M Datasheet
107Kb / 3P
   Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100關s Pulse, 10% Duty
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M/A-COM Technology Solu...
PH2226-110M MA-COM-PH2226-110M Datasheet
107Kb / 3P
   Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100關s Pulse, 10% Duty
PH2856-160 MA-COM-PH2856-160 Datasheet
106Kb / 3P
   Radar Pulsed Power Transistor 160W, 2.856 GHz, 12關s Pulse, 10% Duty
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List of Unclassifed Man...
PH1214-6M ETC1-PH1214-6M Datasheet
89Kb / 1P
   RADAR PULSED POWER TRANSISTOR, 6W, 100us PULSE, 10% DUTY
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