Document Number: 94375

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Revision: 30-Apr-08

7

ST303SPbF Series

Inverter Grade Thyristors

(Stud Version), 300 A

Vishay High Power Products

Fig. 13 - Frequency Characteristics

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

1E0

1E1

1E2

1E3

1E4

1E1

1E2

1E3

1E4

50 Hz

400

2500

100

1000

1500

200

Pulse Basewidth (µs)

2000

Snub ber circ uit

R = 10 ohms

C

= 0.47 µF

V

= 80% V

s

s

D

DRM

ST303SSeries

Trapezoidal pulse

T = 40°C

di/ d t = 100A/ µs

C

tp

500

1E1

1E2

1E3

1E4

50 Hz

400

100

1000

1500

200

Pulse Basewidth (µs)

ST303SSeries

Trapezoidal pulse

T = 65°C

di/ d t = 100A/ µs

C

Snub b er c irc uit

R = 10 ohms

C

= 0.47 µF

V

= 80%V

s

s

D

DRM

2000

tp

500

1E1

1E2

1E3

1E4

1E5

1E1

1E2

1E3

1E4

Pulse Basewidth (µs)

20 joules p er p ulse

2

1

0.5

10

5

3

0.4

ST303SSeries

Sinusoid al p ulse

tp

1E1

1E2

1E3

1E4

Pulse Basewidth (µs)

20 joulesp er pulse

2

1

0.5

10

5

ST303SSeries

Rectangula r p ulse

di/ dt = 50A/ µs

tp

3

0.4

0.1

1

10

100

0.001

0.01

0.1

1

10

100

VGD

IGD

(b)

(a)

(1)

(2)

InstantaneousGate Current (A)

Rec tangular gate pulse

a) Recommended load line for

b) Recommended load line for

<=30%rated di/ dt : 10V, 10ohms

rated di/ dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 20ms

(2) PGM = 20W, tp = 10ms

(3) PGM = 40W, tp = 5ms

(4) PGM = 60W, tp = 3.3ms

(3)

Device: ST303SSeries

(4)

Frequency Limited by PG(AV)