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TIP107 데이터시트(PDF) 2 Page - STMicroelectronics |
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TIP107 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 62. 5 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ICEO Collector Cut-of f Current (IB =0) for TIP105 VCE =30 V for T IP102/ TIP107 VCE =50 V 50 50 µA µA ICBO Collector Cut-of f Current (IE =0) for TIP105 VCB =60 V for T IP102/ TIP107 VCB =100 V 50 50 µA µA IEBO Emitter Cut-of f Current (IC =0) VEB =5 V 8 mA VCEO(sus )* Collector-Emitt er Sustaining Volt age (IB =0) IC =30 mA for TIP105 for T IP102/ TIP107 60 100 V V VCE(sat)* Collector-Emitt er Sat uration Voltage IC =3 A IB =6 mA IC =8 A IB =80 mA 2 2. 5 V V VBE * Base-Emitter Volt age IC =8 A VCE =4 V 2. 8 V hFE* DC Current G ain IC =3 A VCE =4 V IC =8 A VCE =4 V 1000 200 20000 VF*Forward Voltage of Commut ation Diode (IB =0) IF =- IC =10 A 2. 8 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area TIP102 / TIP105 / TIP107 2/4 |
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