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MC33990 데이터시트(PDF) 5 Page - Freescale Semiconductor, Inc |
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MC33990 데이터시트(HTML) 5 Page - Freescale Semiconductor, Inc |
5 / 16 page Analog Integrated Circuit Device Data Freescale Semiconductor 5 33990 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted. Typical values reflect the parameter's approximate midpoint average value with V BAT = 13 V, TA = 25°C. All positive currents are into the pin. All negative currents are out of the pin. Characteristic Symbol Min Typ Max Unit POWER CONSUMPTION Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave) BUS Load = 1380 Ω to GND, 3.6 nF to GND BUS Load = 257 Ω to GND, 20.2 nF to GND IBAT(OP1) IBAT(OP2) – – 3.0 22.4 11.5 32 mA Battery Bus Low Input Current After SLEEP Toggle Low to High; Prior to Tx Toggling After Tx Toggle High to Low IBAT(BUS L1) IBAT(BUS L2) – – 1.1 6.4 3.0 8.5 mA Sleep State Battery Current VSLEEP = 0 V IBAT(SLEEP) – 38.2 65 µA BUS BUS Input Receiver Threshold (7) Threshold High (Bus Increasing until Rx ≥ 3.0 V) Threshold Low (Bus Decreasing until Rx ≤ 3.0 V) Threshold in Sleep State (SLEEP = 0 V) Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V) VBUS(IH) VBUS(IL) BUSTH(SLEEP) VBUS(HYST) 4.25 – 2.4 0.1 3.9 3.7 3.0 0.2 – 3.5 3.4 0.6 V BUS-Out Voltage (Tx = 5.0 V, 257 Ω ≤ RBUS(L) to GND ≤ 1380 Ω) 8.2 V ≤ VBAT ≤ 16 V 4.25 V ≤ VBAT ≤ 8.2 V Tx = 0 V VBUS(OUT1) VBUS(OUT2) VBUS(OUT3) 6.25 VBAT - 1.6 – 6.9 – 0.27 8.0 VBAT 0.7 V BUS Short Circuit Output Current Tx = 5.0 V, -2.0 V ≤ VBUS ≤ 4.8 V IBUS(SHORT) 60 129 170 mA BUS Leakage Current -2.0 V ≤ VBUS ≤ 0 V (≥ 2.0 ms after Tx Falls to 0 V) 0 V ≤ VBUS ≤ VBAT 0 V ≤ VBUS ≤ 8.0 V IBUS(LEAK1) IBUS(LEAK2) IBUS(LEAK3) -0.5 -0.5 – -0.055 0.5 0.25 0.5 1.0 0.5 mA BUS Thermal Shutdown (8) (Tx = 5.0 V, IBUS = -0.1 mA) Increase Temperature until VBUS ≤ 2.5 V TBUS(LIM) 150 170 190 °C BUS Thermal Shutdown Hysteresis (9) TBUS(LIM) - TBUS(REEN) TBUS(LIMHYS) 10 12 15 °C LOAD Input Current with Loss of Ground VLOAD = -18 V (see Figure 4) ILOAD(LOG) -1.0 – 0.1 mA BUS Input Current with Loss of Ground VBUS = -18 V (see Figure 4) IBUS(LOG) -1.0 – 0.1 mA Notes 7. Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C. 8. Device characterized but not production tested for thermal shutdown. 9. Device characterized but not production tested for thermal shutdown hysteresis. |
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