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DAC1001D125HL 데이터시트(PDF) 5 Page - NXP Semiconductors |
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DAC1001D125HL 데이터시트(HTML) 5 Page - NXP Semiconductors |
5 / 25 page DAC1001D125_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 24 November 2008 5 of 25 NXP Semiconductors DAC1001D125 Dual 10-bit, up to 125 Msps DAC 7. Limiting values [1] All supplies are connected together. 8. Thermal characteristics 9. Characteristics Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDDD digital supply voltage [1] −0.3 +5.0 V VDDA analog supply voltage [1] −0.3 +5.0 V ∆VDD supply voltage difference between analog and digital supply voltage −150 +150 mV VI input voltage digital inputs referenced to DGND −0.3 +5.5 V pins REFIO, AVIRES, BVIRES referenced to AGND −0.3 +5.5 V VO output voltage pins IOUTAP, IOUTAN, IOUTBP and IOUTBN referenced to AGND −0.3 VDDA + 0.3 V Tstg storage temperature −55 +150 °C Tamb ambient temperature −40 +85 °C Tj junction temperature - 125 °C Table 4. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient in free air 89.3 K/W Rth(c-a) thermal resistance from case to ambient in free air 60.6 K/W Table 5. Characteristics VDDD = VDDA = 3.3 V; AGND and DGND connected together; IO(fs) = 20 mA and Tamb = −40 °C to +85 °C; typical values measured at Tamb = 25 °C. Symbol Parameter Conditions Min Typ Max Unit Supplies VDDD digital supply voltage 3.0 3.3 3.65 V VDDA analog supply voltage 3.0 3.3 3.65 V IDDD digital supply current fs = 65 Msps, fo = 1 MHz, VDD = 3.0 V to 3.6 V -6 7 mA IDDA analog supply current fs = 65 Msps, fo = 1 MHz, VDD = 3.0 V to 3.6 V -50 65 mA Ptot total power dissipation fs = 65 Msps, fo = 1 MHz, VDD = 3.0 V to 3.6 V - 185 260 mW Ppd power dissipation in power-down mode - 16.5 - mW Digital inputs VIL LOW-level input voltage DGND - 0.9 V VIH HIGH-level input voltage 1.3 - VDDD V |
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