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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TC1410 데이터시트(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC1410 데이터시트(HTML) 2 Page - TelCom Semiconductor, Inc |
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2 / 5 page  4-184 TELCOM SEMICONDUCTOR, INC. 0.5A HIGH-SPEED MOSFET DRIVERS TC1410 TC1410N ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150 °C Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W Operating Temperature Range C Version ............................................... 0 °C to +70°C E Version .......................................... – 40 °C to +85°C Power Dissipation (TA ≤ 70°C) Plastic DIP ...................................................... 730mW CerDIP ............................................................ 800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless other- wise specified. Typical values are measured at TA=25°C; VDD =16V. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.0 — — V VIL Logic 0 Low Input Voltage — — 0.8 V IIN Input Current – 5V ≤ VIN ≤ VDD TA = 25°C– 1 — 1 µA – 40 °C ≤ TA ≤ 85°C – 10 — 10 Output VOH High Output Voltage DC Test VDD – 0.025 — — V VOL Low Output Voltage DC Test — — 0.025 V RO Output Resistance VDD = 16V, IO = 10mA TA=25°C — 16 22 Ω 0 °C ≤ TA ≤ 70°C — 20 28 – 40 °C ≤ TA ≤ 85°C —20 28 IPK Peak Output Current VDD = 16V — 0.5 — A IREV Latch-Up Protection Duty Cycle ≤ 2% 0.5 — — A Withstand Reverse Current t ≤ 300 µsec Switching Time (Note 1) tR Rise Time Figure 1 TA = 25°C — 25 35 nsec 0 °C ≤ TA ≤ 70°C — 27 40 – 40 °C ≤ TA ≤ 85°C —29 40 tF Fall Time Figure 1 TA = 25°C — 25 35 nsec 0 °C ≤ TA ≤ 70°C — 27 40 – 40 °C ≤ TA ≤ 85°C —29 40 tD1 Delay Time Figure 1 TA = 25°C — 30 40 nsec 0 °C ≤ TA ≤ 70°C — 33 45 – 40 °C ≤ TA ≤ 85°C —35 45 tD2 Delay Time Figure 1 TA = 25°C — 30 40 nsec 0 °C ≤ TA ≤ 70°C — 33 45 – 40 °C ≤ TA ≤ 85°C —35 45 Power Supply IS Power Supply Current VIN = 3V VDD = 16V — 0.5 1.0 mA VIN = 0V — 0.1 0.15 NOTE: 1. Switching times are guaranteed by design. VDD = 16V |
유사한 부품 번호 - TC1410 |
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유사한 설명 - TC1410 |
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