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TC55RP6001EMB 데이터시트(PDF) 3 Page - TelCom Semiconductor, Inc |
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TC55RP6001EMB 데이터시트(HTML) 3 Page - TelCom Semiconductor, Inc |
3 / 3 page 4-129 TELCOM SEMICONDUCTOR, INC. 7 6 5 4 3 1 2 8 TC55 Series LOW DROPOUT POSITIVE VOLTAGE REGULATOR TC55RP30 ELECTRICAL CHARACTERISTICS: VOUT(S) = 5.0V, TA = 25°C unless otherwise specified (see REMARKS). Symbol Parameter Test Conditions Min Typ Max Unit VOUT(A) Output Voltage IOUT = 40mA — — — V VIN = 4.0V 2.94 3.0 3.06 IOUTmax Maximum Output Current VIN = 4.0V, VOUT(A) ≥ 2.7V 150 — — mA ∆VOUT Load Regulation VIN = 4.0V, 1 mA ≤ IOUT ≤ 80mA — 45 90 mV Vdif I/O Voltage Difference IOUT = 80mA — 180 360 mV IOUT = 160mA — 400 700 ISS Current Consumption VIN = 4.0V — 0.9 2.8 µA VOUT(A)·100 Voltage Regulation IOUT = 40mA — 0.2 0.3 %/V ∆VIN·VOUT(S) 4.0V ≤ VIN ≤ 10.0V VIN Input Voltage — — 10.0 V ∆VOUT(A)·106 Temperature Coefficient IOUT = 40mA — ±100 — ppm/ °C ∆TA·VOUT(S) of Output Voltage – 40 °C ≤ TA ≤ 85°C Long Term Stability TA = 125°C, 1000 Hours — 0.5 — % MARKING SOT-23A-3 SOT-89-3 x x TO-92-3 8 12 4 7 11 3 6 10 2 5 9 1 represents first voltage digit 2 3456 ex: 3.xV = kkkk represents first decimal place voltage (x.0 - x.9) A = x.0 E = x.4 L = x.8 B = x.1 F = x.5 M = x.9 C = x.2 H = x.6 D = x.3 K = x.7 ex: 3.4V = kkkk represents Polarity 0 = Positive (fixed) represents assembly lot number 3 3E , , & = 55RP (fixed) = first voltage digit (2-6) = first voltage decimal (0-9) = extra feature code : fixed : 0 = regulation accuracy 1 = ±1.0% (custom), 2 = ±2.0% (standard) , , & = assembly lot number *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. |
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