전자부품 데이터시트 검색엔진 |
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BAP70-03 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BAP70-03 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type www.kexin.com.cn 1 Diodes Unit: mm SOD-323 1.7+0.1 -0.1 2.6+0.1 -0.1 0.475 0.375 0.85+0.05 -0.05 1.0max Silicon PIN diode BAP70-03 Features High voltage, current controlled RF resistor forattenuators Low diode capacitance Very low series inductance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Min Max Unit continuous reverse voltage VR 50 V continuous forward current IF 100 mA total power dissipation Ts = 90 Ptot 500 mW storage temperature Tstg -65 +150 junction temperature Tj -65 +150 thermal resistance from junction to soldering point Rth j-s 120 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit forward voltage VF IF = 50 mA 0.95 1.1 V reverse leakage current IR VR = 30 V 20 nA VR = 0;f= 1 MHz 570 VR = 1 V; f = 1 MHz 400 VR = 5 V; f = 1 MHz 270 VR = 20V; f = 1 MHz 200 250 IF = 0.5 mA; f = 100 MHz 77 100 IF = 1 mA;f= 100 MHz 40 50 IF = 10 mA; f = 100 MHz 5.4 7 IF = 100 mA; f = 100 MHz 1.4 1.9 when switched from IF =10mA toIR =6mA; RL = 100 ;measured at IR =3mA series inductance LS IF = 100 mA; f = 100 MHz 1.5 nH fF diode capacitance Cd rD diode forward resistance ìs L charge carrier life time 1.25 Marking Marking A9 |
유사한 부품 번호 - BAP70-03 |
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유사한 설명 - BAP70-03 |
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