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TC96C555MJA 데이터시트(PDF) 3 Page - TelCom Semiconductor, Inc

부품명 TC96C555MJA
상세설명  3A OUTPUT PROGRAMMABLE POWER OSCILLATOR
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제조업체  TELCOM [TelCom Semiconductor, Inc]
홈페이지  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC96C555MJA 데이터시트(HTML) 3 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
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TC96C555
3A OUTPUT PROGRAMMABLE
POWER OSCILLATOR
ELECTRICAL CHARACTERISTICS: specifications over operating temperature range unless otherwise
specified 5.0V < VDD <18V.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
Programmable Current Range
Pin 4 Input Current for ISOURCE Control
(VREF-VR1) / RCHG Fig. 2
5.0
100
µA
Pin 1 Input Current for ISINK Control
(VREF-VR2) / RDIS Fig. 2
5.0
100
µA
Reference Section
VREF
VDD = 15V
IREF = 10µA
3.6
4
4.4
V
VDD = 7 to 18V
Line Regulation of VREF
0.9
1.5
%/V
IREF = 0 to 1mA
Load Regulation of VREF
0.1
0.4
%/mA
VDRIFT
VREF Drift Over Lifetime
5
%
TCVREF
VREF Tempco
– 55
≤ Temp ≤ 125°C
1100
2000
ppm/
°C
VR1, VR2
Voltage Pin at 1 and 4
VDD = 15V
2.7
3
3.3
V
VREF-VR
Voltage Across RCHG and RDIS
0.8
1
1.2
V
Vih
Pin 2, High Switching Threshold
VDD = 15V
1.75
2
2.25
V
Vil
Pin 2, Low Switching Threshold
VDD = 15V
0.75
1
1.25
V
Vih to Vil
Delta High to Low Threshold
VDD = 15V
0.9
1.0
1.1
V
IREF
VREF Pin 3 Short to GND Pin 5
VDD = 15V
18
mA
Oscillator
Voltage Stability
VDD = 7V to 18V
1
8
%/V
Temperature Stability
– 55
≤ Temp ≤ 125°C
0.4
%/
°C
Power Supply
IDD
Power Supply Current
0
≤ VIN ≤ 3V
4
mA
Switching Time1
tR
Rise Time
C1 = 180pF, Fig. 1
33
40
nsec
tF
Fall Time
C1 = 1800pF, Fig. 1
30
40
nsec
tD1
Delay Time
Fg. 1
180
220
nsec
tD2
Delay Time
Fig. 1
160
200
nsec
Output
VOH
High Output Voltage
VDD – 0.025
––
V
VOL
Low Output Voltage
0.025
V
RO
Output Res Hi State
VDD = 15V
4.5
6
RO
Output Res Lo State
VDD = 15V
3.4
6
IPK
Peak Output Current
VDD = 18V
2
A
NOTE :
1Switching times guaranteed by design.
The typical values are from 125
°C measurements.
Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those
listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the Operational Specifications is not implied. Any exposure to Absolute Maximum Rating
Conditions may affect device reliability.


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