전자부품 데이터시트 검색엔진 |
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2SD1979 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SD1979 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 1 Emitter 2 Base 3 Collector Silicon NPN Epitaxial Planar Type 2SD1979 Features Low on resistance ron. High forward current transfer ratio hFE. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Peak collector current ICP 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 hFE Classification Marking Rank S T hFE 500 1500 800 2500 3W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage VCEO IC =1mA, IB =0 20 V Base-emitter voltage VBE VCE =2V, IC =4mA 0.6 V Collector-base cutoff current ICBO VCB =50V, IE =0 1 ìA Collector-emitter cutoff current ICEO VEB =25V, IC =0 1 ìA Forward current transfer ratio hFE VCE =2V, IC = 4 mA 500 2500 Collector-emitter saturation voltage VCE(sat) IC =30mA, IB =3mA 0.1 V Transition frequency fT VCB =6V, IE = -4 mA,f= 200 MHz 80 MHz Collector output capacitance Cob VCB =10V, IE = 0,f= 1 MHz 4.5 pF ON resistance Ron 1Ù |
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