전자부품 데이터시트 검색엔진 |
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2SC1654 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC1654 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 3 page SMD Type IC www.kexin.com.cn 1 SMD Type Transistors 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 NPN Silicon Epitaxial Transistor 2SC1654 Features High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 160V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5V Collector current IC 50 mA power dissipation PD 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 hFE Classification Marking N5N6N7 hFE 90 180 135 270 200 400 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB =130V, IE=0 0.1 A Emitter cutoff current IEBO VEB =5V, IC=0 0.1 A VCE =3V , IC = 15mA 90 200 400 VCE =3V , IC = 1mA 70 180 Collector-emitter saturation voltage * VCE(sat) IC =50mA,IB =5mA 0.1 0.3 V Base-emitter saturation voltage * VBE(sat) IC =50mA,IB = 5mA 0.73 1.0 V Output capacitance Cob VCB =10V ,IE =0,f=1.0MHz 2.3 pF Transiston frequency fT VCE =10V ,IE = -10mA 120 MHz * Pulse test: tp 350 ìs; d 0.02. DC current gain * hFE |
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