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KC807A 데이터시트(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

부품명 KC807A
상세설명  PNP Silicon AF Transistors
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제조업체  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
홈페이지  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

KC807A 데이터시트(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  KC807A Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
www.kexin.com.cn
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-45
V
Emitter-base voltage
VEBO
-5
V
Collector current (DC)
IC
-500
mA
Peak collector current
ICM
-1
A
Base current
IB
-100
mA
power dissipation
PD
310
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65to+150
PNP Silicon AF Transistors
KC807A(BC807A)
Marking
NO.
KC807A-16
KC807A-25
KC807A-40
Marking
5A
5B
5C
Electrical Characteristics Ta = 25
Symbol
Testconditons
Min
Typ
Max
Unit
VCBO
IC =-10
A, IE =0
-50
V
VCEO
IC =-10 mA,IB =0
-45
V
VEBO
IE =-10
A, IC =0
-5
V
VCB =-25 V, IE = 0
-100
nA
VCB =-25 V, IE =0,TA = 150
-50
A
IEBO
VEB =-4V,IC = 0
-100
nA
KC807A-16
100
160
250
KC807A-25
160
250
400
KC807A-40
250
350
630
VCE(sat) IC = -500 mA, IB =-50 mA
-0.7
V
VBE(sat) IC = -500 mA, IB =-50 mA
-1.2
V
CCb
VCB = -10 V, f = 1 MHz
10
pF
Ceb
VEB = -0.5 V, f = 1 MHz
60
pF
fT
IC =-50 mA,VCE = -5 V, f = 100 MHz
200
MHz
* Pulsed: PW
350 ìs, duty cycle
2%
Base to emitter voltage *
Collector cutoff current
Collector-base capacitance
Transition frequency
Emitter-base capacitance
Collector saturation voltage *
IC = -100 mA, VCE =-1V
Parameter
Emitter cutoff current
DC current gain *
Emitter-to-base breakdown voltage
hFE
ICBO
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage


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