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BU209 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 BU209
상세설명  isc Silicon NPN Power Transistor
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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BU209 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU209
DESCRIPTION
·High Reverse Voltage
·High Peak Power
·Collector Current- IC = 4A
APPLICATIONS
·Designed for use in horizontal deflection circuits in color TV
receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1700
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
7.5
A
IB
B
Base Current-Continuous
2.5
A
IBM
Base Current-Peak
4
A
PC
Collector Power Dissipation
@TC≤95℃
12.5
W
TJ
Junction Temperature
115
℃
Tstg
Storage Temperature
-65~115
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.6
℃/W
isc Website：www.iscsemi.cn


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