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TIP131 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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TIP131 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP131 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA B 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A, IB= 30mA B 3.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V 2.5 V ICBO Collector Cutoff Current VCB= 80V, IE= 0 0.2 mA ICEO Collector Cutoff Current VCE= 40V, IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 500 hFE-2 DC Current Gain IC= 4A; VCE= 4V 1000 15000 isc Website:www.iscsemi.cn |
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