전자부품 데이터시트 검색엔진 |
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IRF830 데이터시트(PDF) 4 Page - Advanced Power Electronics Corp. |
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IRF830 데이터시트(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 IRF830 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1 10 100 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 1s 100us 1ms 10ms 100m 0 2 4 6 8 10 12 0 10203040 Q G , Total Gate Charge (nC) I D =3.1A V DS =100V V DS =250V V DS =400V 10 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge DC |
유사한 부품 번호 - IRF830 |
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유사한 설명 - IRF830 |
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