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TSDF1250RW 데이터시트(PDF) 2 Page - Vishay Siliconix |
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TSDF1250RW 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 6 page TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 5, 08-Jul-99 2 (6) Document Number 85067 Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu RthJA 450 K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current VCE = 12 V, VBE = 0 ICES 100 mA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 2 mA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 6 V Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA VCEsat 0.1 0.5 V DC forward current transfer ratio VCE = 5 V, IC = 40 mA hFE 50 100 150 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Transition frequency VCE = 5 V, IC = 40 mA, f = 1 GHz fT 12 GHz Collector-base capacitance VCB = 1 V, f = 1 MHz Ccb 0.6 pF Collector-emitter capacitance VCE = 1 V, f = 1 MHz Cce 0.3 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.7 pF Noise figure VCE = 5 V, IC = 5 mA, ZS = ZSopt, ZL = 50 W, f = 2 GHz F 1.2 dB Power gain VCE = 5 V, IC = 5 mA, f = 2 GHz (@Fopt) Gpe 11 dB VCE = 5 V, IC = 40 mA, ZS = ZSopt, ZL = 50 W, f = 2 GHz Gpe 13.5 dB Transducer gain VCE = 5 V, IC = 40 mA, Z0 = 50 W, f = 2 GHz S21e2 12.5 dB Third order intercept point at output VCE = 5 V, IC = 40 mA, f = 2 GHz IP3 28 dBm |
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