TSHA440 datasheet(2/5 Pages) VISHAY

부품명	TSHA440

상세설명	GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1) Package

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제조업체	VISHAY [Vishay Siliconix]

홈페이지	http://www.vishay.com

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2 / 5 page

TSHA440.

Vishay Telefunken

2 (5)

Rev. 2, 20-May-99

www.vishay.de

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Document Number 81017

Basic Characteristics

Tamb = 25_C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward Voltage

IF = 100 mA, tp = 20 ms

VF

1.5

1.8

V

g

IF = 1.5 A, tp = 100 ms

VF

3.2

4.9

V

Temp. Coefficient of VF

IF = 100mA

TKVF

–1.6

mV/K

Reverse Current

VR = 5 V

IR

100

mA

Junction Capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

20

pF

Temp. Coefficient of

fe

IF = 100 mA

TKfe

–0.7

%/K

Angle of Half Intensity

ϕ

±20

deg

Peak Wavelength

IF = 100 mA

lp

875

nm

Spectral Bandwidth

IF = 100 mA

Dl

80

nm

Temp. Coefficient of

lp

IF = 100 mA

TKlp

0.2

nm/K

Rise Time

IF = 100 mA

tr

600

ns

IF = 1.5 A

tr

300

ns

Fall Time

IF = 100 mA

tf

600

ns

IF = 1.5 A

tf

300

ns

Type Dedicated Characteristics

Tamb = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Radiant Intensity

IF=100mA, tp=20ms

TSHA4400

Ie

12

20

mW/sr

y

F

TSHA4401

Ie

16

30

mW/sr

IF=1.5A, tp=100ms

TSHA4400

Ie

140

240

mW/sr

F

m

TSHA4401

Ie

190

360

mW/sr

Radiant Power

IF=100mA, tp=20ms

TSHA4400

fe

20

mW

F

TSHA4401

fe

24

mW

Typical Characteristics (Tamb = 25_C unless otherwise specified)

0

20

406080

0

50

100

150

200

250

Tamb – Ambient Temperature ( °C )

100

12789

RthJA

Figure 1. Power Dissipation vs. Ambient Temperature

0

20

406080

0

25

50

75

100

125

Tamb – Ambient Temperature ( °C )

100

94 7941 e

Figure 2. Forward Current vs. Ambient Temperature

유사한 부품 번호 - TSHA440

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TSHA4400	106Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.6, 16-Sep-08
	TSHA4400	119Kb / 5P	Infrared Emitting Diode, 875 nm, GaAlAs Rev. 1.8, 15-Sep-14
	TSHA4400	117Kb / 5P	Infrared Emitting Diode, 875 nm, GaAlAs 01-Jan-2022
	TSHA4400	117Kb / 5P	Infrared Emitting Diode, 875 nm, GaAlAs 01-Jan-2023
	TSHA4400	106Kb / 5P	Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Rev. 1.6, 16-Sep-08

More results

유사한 설명 - TSHA440

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	TSHA650	88Kb / 6P	GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package Rev. 3, 20-May-99
	TSHA520	89Kb / 6P	GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package Rev. 2, 20-May-99
	TSHA620	87Kb / 6P	GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package Rev. 2, 20-May-99
	TSUS520	86Kb / 6P	GaAs Infrared Emitting Diodes in ø 5 mm (T–1 3/4) Package Rev. 2, 20-May-99
	TSUS4400	81Kb / 5P	GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package Rev. 2, 20-May-99
	TSUS4300	80Kb / 5P	GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package Rev. 2, 20-May-99
Unity Opto Technology	MIE-324L3	32Kb / 2P	GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
	MIE-514L3	31Kb / 2P	GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-524L3	31Kb / 2P	GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
	MIE-534L3	32Kb / 2P	GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

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TSHA440 데이터시트(PDF) 2 Page - Vishay Siliconix

TSHA440 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - TSHA440

유사한 설명 - TSHA440

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