STU312D datasheet(2/11 Pages) SAMHOP

부품명	STU312D

상세설명	Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

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제조업체	SAMHOP [SamHop Microelectronics Corp.]

홈페이지	http://www.samhop.com.tw

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S T U312D

=

Parameter

S ymbol

Condition

Min Typ Max Unit

OFF CHAR ACTE R IS TICS

Drain-S ource Breakdown Voltage

BVDSS

=

VGS 0V, ID 250uA

=

30

V

Zero Gate Voltage Drain Current

IDSS

VDS 24V, VGS 0V

=

1

Gate-Body Leakage

IGSS

VGS

24V, VDS 0V

=

100

uA

ON CHAR ACTE R IS TICS

a

Gate Threshold Voltage

VGS(th)

VDS VGS, ID = 250uA

=

V

Drain-S ource On-S tate R esistance

R DS(ON)

VGS 10V, ID 10A

18

VGS 4.5V, ID 8A

36

On-S tate Drain Current

ID(ON)

VDS = 5V, VGS = 4.5V

A

S

Forward Transconductance

FS

g

VDS 10V, ID 10A

DYNAMIC CHAR ACTE R IS TICS

b

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

VDS =15V, VGS = 0V

f =1.0MHZ

P

F

P

F

P

F

S WITCHING CHAR ACTE R IS TICS

b

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

VDD = 15V

ID = 1 A

VGS = 10V

R GEN = 6 ohm

ns

Total Gate Charge

Gate-S ource Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDS =15V, ID = 20 A

VGS =10V

nC

C

Fall Time

=

2

5

24

uA

m ohm

N-Channel ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)

VDS =15V, ID =20A,VGS =10V

nC

VDS =15V, ID =20A,VGS =4.5V

20

110

180

640

13

7

40

12

13

3.5

1.5

6.8

15

ohm

R g

Gate resistance

VGS =0V, VDS = 0V, f=1.0MHZ

0.5

1

3

1.8

24

유사한 부품 번호 - STU312D

제조업체	부품명	데이터시트	상세설명
VBsemi Electronics Co.,...	STU312D	1Mb / 13P	N- and P-Channel 40 V (D-S) MOSFET

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유사한 설명 - STU312D

제조업체	부품명	데이터시트	상세설명
SamHop Microelectronics...	STU309DH	201Kb / 11P	Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)
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STU312D 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

STU312D 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

유사한 부품 번호 - STU312D

유사한 설명 - STU312D

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