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2SC4419 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4419 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4419 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IB=0 10 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=900V ;IE=0 1.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA hFE DC current gain IC=2A ; VCE=5V 10 Switching times ton Turn-on time 1.0 μs tstg Storage time 4.0 μs tf Fall time IC=3A;IB1=0.6A; IB2=-1.2A;RL=100Ω PW=20μs,Duty≤2% 0.8 μs |
유사한 부품 번호 - 2SC4419 |
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유사한 설명 - 2SC4419 |
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