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2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1550 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 400 V VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=8A ; VCE=5V 5 |
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