BD245C datasheet(1/3 Pages) ISC

부품명	BD245C

상세설명	isc Silicon NPN Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD245/A/B/C

DESCRIPTION

·Collector Current -IC= 10A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A

80V(Min)- BD245B; 100V(Min)- BD245C

·Complement to Type BD246/A/B/C

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD245

55

BD245A

70

BD245B

90

VCER

Collector-Emitter

Voltage (RBE= 100Ω)

BD245C

115

V

BD245

45

BD245A

60

BD245B

80

VCEO

Collector-Emitter

Voltage

BD245C

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

15

A

IB

B

Base Current

3

A

Collector Power Dissipation

@ Ta=25℃

3

PC

Collector Power Dissipation

@ TC=25℃

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.56

℃/W

isc Website：www.iscsemi.cn

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