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2SD1649 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SD1649 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1649 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 7 V V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=< 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V 3 MHz VF Diode forward voltage IF=2.5A 2.0 V tf Fall time IC=2A;IB1=0.6A;IB2=-1.2A VCC=200V;RL=100B 0.4 µs |
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