전자부품 데이터시트 검색엔진 |
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2SC2981 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SC2981 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2981 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=7 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBE(sat) Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=750V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 10 |
유사한 부품 번호 - 2SC2981 |
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유사한 설명 - 2SC2981 |
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