전자부품 데이터시트 검색엔진 |
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2SC3318 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SC3318 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3318 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=5V 10 Switching times resistive load ton Turn-on time 0.5 µs ts Storage time 1.5 µs tf Fall time IC=5.0A IB1=1A IB2=-2A RL=30ohm PW=20µs Duty=<2% 0.15 µs |
유사한 부품 번호 - 2SC3318 |
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유사한 설명 - 2SC3318 |
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