전자부품 데이터시트 검색엔진 |
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2SD200 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SD200 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD200 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=0.5A ; VCE=5V 8 hFE-2 DC current gain IC=2A ; VCE=5V 2.5 |
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유사한 설명 - 2SD200 |
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