전자부품 데이터시트 검색엔진 |
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BAT54-V-GS08 데이터시트(PDF) 2 Page - Vishay Siliconix |
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BAT54-V-GS08 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85508 Rev. 1.7, 16-Oct-06 BAT54-V/54A-V/54C-V/54S-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Device on fiberglass substrate, see layout on next page. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) Parameter Test condition Symbol Value Unit Thermal resistance junction to ambiant air RthJA 4301) K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Reverse Breakdown voltage IR = 100 µA (pulsed) V(BR) 30 V Leakage current Pulse test tp < 300 µs, δ < 2 % at VR = 25 V IR 2µA Forward voltage IF = 0.1 mA, tp < 300 µs, δ < 2 % VF 240 mV IF = 1 mA, tp < 300 µs, δ < 2 % VF 320 mV IF = 10 mA, tp < 300 µs, δ < 2 % VF 400 mV IF = 30 mA, tp < 300 µs, δ < 2 % VF 500 mV IF = 100 mA, tp < 300 µs, δ < 2 % VF 800 mV Diode capacitance VR = 1 V, f = 1 MHz CD 10 pF Reverse recovery time IF = 10 mA to IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5ns 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2) |
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