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2SC3650 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC3650 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 3 page FEATURES Low collector-emitter saturation voltage VCE(sat) High DC current gain Large current capacity LF amp, various drivers, muting circuit =25 C o MAXIMUM RATINGS (TA unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 15 V IC Collector Current -Continuous 1.2 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 C o unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10 µA, IE=0 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 V Emitter-base breakdown voltage V(BR)EBO IE=10 µA, IC=0 V Collector cut-off current ICBO VCB=20V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=10 V, IC=0 0.1 µA hFE1 VCE=5V, IC=500mA 3200 30 25 15 800 600 DC current gain hFE2 VCE=5V, IC=10 A Collector-emitter saturation voltage VCE(sat) IC=500 A, IB=10mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=500 A, IB=10mA 1.2 V Transition frequency fT VCE=10 V, IC=50mA 220 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 17 pF MARKING CF Any changing of specification will not be informed individual 2SC3650 NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente 08-May-2007 Rev. A Page 1 of 3 SOT-89 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 q TYP. M 0.70 REF. |
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