2SD1949 datasheet(1/2 Pages) SECOS

부품명	2SD1949

상세설명	NPN Silicon General Purpose Transistor

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2SD1949

NPN Silicon

General Purpose Transistor

RoHS Compliant Product

*

High current.(IC=5A)

*

Low saturation voltage, typically

VCE(sat)=0.1V at IC / IB=150mA / 15mA

FEATURES

COLLECTOR

BASE

EMITTER

Dim

Min

Max

A

1.800

2.200

B

1.150

1.350

C

0.800

1.000

D

0.300

0.400

G

1.200

1.400

H

0.000

0.100

J

0.100

0.250

K

0.350

0.500

L

0.590

0.720

S

2.000

2.400

V

0.280

0.420

All Dimension in mm

SOT-323

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

http://www.SeCoSGmbH.com

Elektronische Bauelemente

01-Jun-2002 Rev. A

Page 1 of 4

MAXIMUM RATINGS* TA=25

unless otherwise noted

℃

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

500

mA

PC

Collector Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100µA , IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA ,

IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 30 V, IE=0

0.5

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.5

µA

DC current gain

hFE

VCE=3V, IC=10mA

120

390

Collector-emitter saturation voltage

VCE(sat)

IC= 150mA, IB=15mA

0.4

V

Transition frequency

fT

VCE=5V, IC=20mA

f=100 MHz

250

MHz

Output capacitance

Cob

VCB=10V, IE=0,f=1 MHz

6.5

pF

CLASSIFICATION OF hFE

Rank

Q

R

Range

120-270

180-390

Marking

YQ

YR

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2SD1949 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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