SSG4503A datasheet(2/7 Pages) SECOS

부품명	SSG4503A

상세설명	Enhancement Mode Power Mos.FET

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Electrical Characteristics N Channel( Tj=25 C Unless otherwise specified)

Total Gate Charge

RDS(ON)

Parameter

Symbol

Max.

Typ.

Test Condition

Min.

Unit

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate Threshold Voltage

Gate-Source Leakage Current

Drain-Source Leakage Current (Tj=25 )

Static Drain-Source On-Resistance

Drain-Source Leakage Current (Tj=70 )

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

BVDSS

BVDS/ Tj

VGS(th)

IGSS

IDSS

Crss

Qg

Qgs

Qgd

Td(ON)

Td(Off)

Tr

Ciss

Coss

Tf

30

0.02

1.0

100

1

25

20

28

20

5

12

8

31

12

1450

320

230

±

V

V/

V

nA

uA

m

nC

nS

pF

Ω

VGS=0V

VDS=25V

f=1.0MHz

VDD=15V

ID=1 A

VGS=10 V

RG=3.3

RD=15

Ω

ID=8 A

VDS=24V

VGS=4.5V

VGS=10V, ID=8A

VGS=4.5V, ID=5A

VGS=0V, ID=250uA

VGS= 20V

±

VDS=30V,VGS=0

VDS=24V,VGS=0

VDS=VGS, ID=250uA

Reference to 25 , ID=1mA

_

2

Forward Transconductance

Gfs

S

13

VDS=10V, ID=8A

_

o

C

o

C

o

C

o

C

o

2

30

2230

3.0

Parameter

Symbol

Max.

Typ.

Test Condition

Min.

Unit

Forward On Voltage

Reverse Recovery Time

VSD

Trr

_

IS=1.7A,VGS=0V

IS=8A,V GS=0V

dl/dt=100A/us

V

nS

1.2

27

2

Reverse Recovery Charge

Qrr

_

nC

18

Notes: 1.Pulse width limited by Max. junction temperature.

2.Pulse width 300us, dutycycle 2%.

≦

3.Surface mounted on 1 inch2 copper pad of FR4 board;135

when mounted on min. copper pad.

°

C/W

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 2 of 7

Elektronische Bauelemente

SSG4503A

N Channel 8.3A, 30V,RDS(ON) 20m

Enhancement Mode Power Mos.FET

P Channel -7.1A, -30V,RDS(ON) 28m

Ω

Source-Drain Diode

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