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NBXDBA018LNHTAG 데이터시트(PDF) 3 Page - ON Semiconductor |
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NBXDBA018LNHTAG 데이터시트(HTML) 3 Page - ON Semiconductor |
3 / 7 page NBXDBB018, NBXDBA018 http://onsemi.com 3 Table 6. DC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2) Symbol Characteristic Conditions Min. Typ. Max. Units IDD Power Supply Current (Note 2) 78 100 mA VIH OE and FSEL Input HIGH Voltage 2000 VDD mV VIL OE and FSEL Input LOW Voltage GND − 300 800 mV IIH Input HIGH Current OE FSEL −100 −100 +100 +100 mA IIL Input LOW Current OE FSEL −100 −100 +100 +100 mA VOH Output HIGH Voltage (Note 2) VDD = 3.3 V VDD−1195 2105 VDD−945 2355 mV VOL Output LOW Voltage (Note 2) VDD = 3.3 V VDD−1945 1355 VDD−1600 1700 mV VOUTPP Output Voltage Amplitude (Note 2) 670 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. |
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