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IRFP4668PBF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFP4668PBF
상세설명  HEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFP4668PBF 데이터시트(HTML) 2 Page - International Rectifier

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IRFP4668PbF
2
www.irf.com
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.23mH
RG = 25Ω, IAS = 81A, VGS =10V. Part not recommended for
use above this value.
ƒ ISD ≤ 81A, di/dt ≤ 520A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.21
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
8.0
9.7
m
Ω
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
1.0
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
150
–––
–––
S
Qg
Total Gate Charge
–––
161
241
nC
Qgs
Gate-to-Source Charge
–––
54
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
52
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
109
–––
td(on)
Turn-On Delay Time
–––
41
–––
ns
tr
Rise Time
–––
105
–––
td(off)
Turn-Off Delay Time
–––
64
–––
tf
Fall Time
–––
74
–––
Ciss
Input Capacitance
––– 10720 –––
Coss
Output Capacitance
–––
810
–––
Crss
Reverse Transfer Capacitance
–––
160
–––
pF
Coss eff. (ER) Effective Output Capacitance (Energy Related)h –––
630
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)g
–––
790
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
130
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
520
(Body Diode)
c
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
130
–––
ns
TJ = 25°C
VR = 100V,
–––
155
–––
TJ = 125°C
IF = 81A
Qrr
Reverse Recovery Charge
–––
633
–––
nC TJ = 25°C
di/dt = 100A/μs
f
–––
944
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
8.7
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 81A
RG = 2.7Ω
VGS = 10V
f
VDD = 130V
ID = 81A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 81A, VGS = 0V
f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
c
VGS = 10V, ID = 81A
f
VDS = VGS, ID = 250μA
VDS = 200V, VGS = 0V
VDS = 200V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 100V
Conditions
VGS = 10V
f
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V
h
VGS = 0V, VDS = 0V to 160V
g
Conditions
VDS = 50V, ID = 81A
ID = 81A
VGS = 20V
VGS = -20V


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