1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

45

V

Collector – Base Voltage

VCBO

50

V

Emitter – Base Voltage

VEBO

5.0

V

Collector Current — Continuous

IC

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate, (2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

DEVICE MARKING

BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = –10 mA)

V(BR)CEO

45

—

—

V

Collector – Emitter Breakdown Voltage

(VEB = 0, IC = –10 µA)

V(BR)CES

50

—

—

V

Emitter – Base Breakdown Voltage

(IE = –1.0 mA)

V(BR)EBO

5.0

—

—

V

Collector Cutoff Current

(VCB = 20 V)

(VCB = 20 V, TA = 150°C)

ICBO

—

—

—

—

100

5.0

nA

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Thermal Clad is a registered trademark of the Bergquist Company.

Order this document

by BC817–16LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC817-16LT1

BC817-25LT1

BC817-40LT1

1

2

3

CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)

COLLECTOR

3

2

BASE

1

EMITTER