전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

TPS1101DW 데이터시트(PDF) 3 Page - Texas Instruments

부품명 TPS1101DW
상세설명  SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  TI [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI - Texas Instruments

TPS1101DW 데이터시트(HTML) 3 Page - Texas Instruments

  TPS1101DW Datasheet HTML 1Page - Texas Instruments TPS1101DW Datasheet HTML 2Page - Texas Instruments TPS1101DW Datasheet HTML 3Page - Texas Instruments TPS1101DW Datasheet HTML 4Page - Texas Instruments TPS1101DW Datasheet HTML 5Page - Texas Instruments TPS1101DW Datasheet HTML 6Page - Texas Instruments TPS1101DW Datasheet HTML 7Page - Texas Instruments TPS1101DW Datasheet HTML 8Page - Texas Instruments TPS1101DW Datasheet HTML 9Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
TPS1101, TPS1101Y
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS079C – DECEMBER 1993 – REVISED AUGUST 1995
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
UNIT
Drain-to-source voltage, VDS
– 15
V
Gate-to-source voltage, VGS
2 or – 15
V
D package
TA = 25°C
±0.62
VGS =2 7 V
D package
TA = 125°C
±0.39
VGS = – 2.7 V
PW package
TA = 25°C
±0.61
PW package
TA = 125°C
±0.38
D package
TA = 25°C
±0.88
VGS =3 V
D package
TA = 125°C
±0.47
VGS = – 3 V
PW package
TA = 25°C
±0.86
Continuous drain current (TJ = 150°C) ID‡
PW package
TA = 125°C
±0.45
A
Continuous drain current (TJ = 150°C), ID‡
D package
TA = 25°C
±1.52
A
VGS =4 5 V
D package
TA = 125°C
±0.71
VGS = – 4.5 V
PW package
TA = 25°C
±1.44
PW package
TA = 125°C
±0.67
D package
TA = 25°C
±2.30
VGS =10 V
D package
TA = 125°C
±1.04
VGS = – 10 V
PW package
TA = 25°C
±2.18
PW package
TA = 125°C
±0.98
Pulsed drain current, ID‡
TA = 25°C
±10
A
Continuous source current (diode conduction), IS
TA = 25°C
– 1.1
A
Storage temperature range, Tstg
– 55 to 150
°C
Operating junction temperature range, TJ
– 40 to 150
°C
Operating free-air temperature range, TA
– 40 to 125
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ Maximum values are calculated using a derating factor based on RθJA = 158°C/W for the D package and RθJA = 176°C/W for the PW package.
These devices are mounted on an FR4 board with no special thermal considerations.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR‡
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
TA = 125°C
POWER RATING
D
791 mW
6.33 mW/
°C
506 mW
411 mW
158 mW
PW
710 mW
5.68 mW/
°C
454 mW
369 mW
142 mW
‡ Maximum values are calculated using a derating factor based on RθJA = 158°C/W for the D package and RθJA = 176°C/W
for the PW package. These devices are mounted on an FR4 board with no special thermal considerations.


유사한 부품 번호 - TPS1101DW

제조업체부품명데이터시트상세설명
logo
Texas Instruments
TPS1101D TI1-TPS1101D Datasheet
495Kb / 13P
[Old version datasheet]   SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101DG4 TI1-TPS1101DG4 Datasheet
495Kb / 13P
[Old version datasheet]   SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101DR TI1-TPS1101DR Datasheet
495Kb / 13P
[Old version datasheet]   SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101DRG4 TI1-TPS1101DRG4 Datasheet
495Kb / 13P
[Old version datasheet]   SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
logo
VBsemi Electronics Co.,...
TPS1101DRG4 VBSEMI-TPS1101DRG4 Datasheet
899Kb / 6P
   P-Channel 12-V (D-S) MOSFET
More results

유사한 설명 - TPS1101DW

제조업체부품명데이터시트상세설명
logo
Texas Instruments
TPS1100DR TI1-TPS1100DR Datasheet
700Kb / 14P
[Old version datasheet]   SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1100 TI-TPS1100 Datasheet
155Kb / 10P
[Old version datasheet]   SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1101 TI1-TPS1101_12 Datasheet
495Kb / 13P
[Old version datasheet]   SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
logo
Dongguan City Niuhang E...
NH2305A NIUHANG-NH2305A Datasheet
3Mb / 9P
   P-CHANNEL ENHANCEMENT-MODE MOSFETS
logo
Guilin Strong Micro-Ele...
GMS2301 GSME-GMS2301 Datasheet
268Kb / 3P
   P-Channel Enhancement-Mode MOSFETs
logo
Dongguan City Niuhang E...
NH2301 NIUHANG-NH2301 Datasheet
3Mb / 8P
   P-CHANNEL ENHANCEMENT-MODE MOSFETS
NH3401 NIUHANG-NH3401 Datasheet
2Mb / 3P
   P-CHANNEL ENHANCEMENT-MODE MOSFETS
logo
Texas Instruments
TPS1120 TI-TPS1120 Datasheet
180Kb / 12P
[Old version datasheet]   DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1120 TI1-TPS1120_08 Datasheet
379Kb / 15P
[Old version datasheet]   DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
logo
Silicon Standard Corp.
SSM4953M SSC-SSM4953M Datasheet
115Kb / 6P
   P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


데이터시트 다운로드

Go To PDF Page


링크 URL




개인정보취급방침
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com