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BD169 데이터시트(PDF) 2 Page - Motorola, Inc |
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BD169 데이터시트(HTML) 2 Page - Motorola, Inc |
2 / 4 page BD165 BD169 2 Motorola Bipolar Power Transistor Device Data 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Figure 1. PD – TC Derating Curve TC, CASE TEMPERATURE (°C) 10 Figure 2. Safe Operating Area (see Note 1) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 5.0 3.0 2.0 1.0 0.5 0.1 5.0 7.0 10 20 30 100 50 0.3 0.2 PULSE CURVES APPLY BELOW RATED VCEO TJ = 150°C dc 5.0 ms 1.0 ms 100 µs 70 BD165 BD169 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25°C Figure 3. Collector Saturation Region IB, BASE CURRENT (mA) 1.2 0 1 1 0.8 0.6 0.4 0.2 5 10 50 100 500 1000 IC = 0.1 A 0.25 A 1 A 0.5 A 10 0.01 Figure 4. Current Gain IC, COLLECTOR CURRENT (A) 0.1 0.05 0.1 0.5 1 1 TJ = + 150°C + 25 °C – 25 °C VCE = 2 V Figure 5. “On” Voltage IC, COLLECTOR CURRENT (mA) 1 0.5 0.1 0.05 0.01 10 50 100 500 1000 VBE at VCE = 2 V VBE(sat) at IC/IB = 10 TJ = 25°C VCE(sat) at IC/IB = 10 Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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