전자부품 데이터시트 검색엔진 |
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2SD1060 데이터시트(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1060 데이터시트(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SD1060 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 50 V VCBO Collector-base breakdown voltage IC=1mA ;IE=0 60 V VEBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.4 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 280 hFE-2 DC current gain IC=3A ; VCE=2V 30 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 100 pF fT Transition frequency IC=1A ; VCE=-5V 30 MHz Switching times ton Turn-on time 0.1 μs ts Storage time 1.4 μs tf Fall time IC=2.0A; IB1= IB2=0.2A 0.2 μs hFE-1 classifications Q R S 70-140 100-200 140-280 |
유사한 부품 번호 - 2SD1060 |
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유사한 설명 - 2SD1060 |
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