2SC5606-T1 datasheet(3/7 Pages) NEC

부품명	2SC5606-T1

상세설명	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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Data Sheet PU10781EJ01V0DS

3

2SC5606

TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25

°C)

Mounted on Glass Epoxy Board

(1.08 cm

2

× 1.0 mm (t) )

200

150

115

100

50

0

25

0

50

75

100

125

150

Ambient Temperature TA (

°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

f = 1 MHz

1.0

0.1

1.0

0.1

10.0

100.0

Collector to Base Voltage VCB (V)

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

650 A

μ

IB 100 A step

μ

IB = 50 A

μ

250 A

μ

450 A

μ

40

30

20

10

0

12

3

04

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

Base to Emitter Voltage VBE (V)

50

40

30

20

10

0

0.2

0.4

0.6

0.8

1.0

1.2

VCE = 2 V

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

1 000

100

10

0.1

10.0

1.0

100.0

VCE = 2 V

Remark The graphs indicate nominal characteristics.

<R>

유사한 부품 번호 - 2SC5606-T1

제조업체	부품명	데이터시트	상세설명
NEC	2SC5606-T1	68Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
Renesas Technology Corp	2SC5606-T1	201Kb / 9P	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
California Eastern Labs	2SC5606-T1	329Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Renesas Technology Corp	2SC5606-T1-A	201Kb / 9P	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
California Eastern Labs	2SC5606-T1-A	329Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

More results

유사한 설명 - 2SC5606-T1

제조업체	부품명	데이터시트	상세설명
California Eastern Labs	NE66219	329Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
California Eastern Labs	NESG210719	1Mb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
NEC	2SC5606	68Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
Renesas Technology Corp	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC4226-T1-A	149Kb / 8P	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
NEC	NESG2031M16	119Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
California Eastern Labs	NESG2021M16	861Kb / 11P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
NEC	NESG2021M16	120Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
NEC	NESG4030M14	112Kb / 10P	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
Renesas Technology Corp	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD

More results

2SC5606-T1 데이터시트(PDF) 3 Page - NEC

2SC5606-T1 데이터시트(HTML) 3 Page - NEC

유사한 부품 번호 - 2SC5606-T1

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