©2009 Fairchild Semiconductor Corporation

FDD6778A Rev.C

www.fairchildsemi.com

1

January 2009

FDD6778A

25 V, 14.0 m

Ω

Features

100% UIL tested

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using either

synchronous or conventional switching PWM controllers. It has

switching speed.

Applications

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

G

S

D

TO -252

D-PAK

(TO-252)

D

G

S

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

25

V

Gate to Source Voltage

±20

V

Drain Current -Continuous (Package limited)

10

A

-Continuous (Silicon limited)

30

-Continuous

(Note 1a)

12

-Pulsed

50

Single Pulse Avalanche Energy

(Note 3)

12

mJ

Power Dissipation

24

W

Power Dissipation

(Note 1a)

3.7

Operating and Storage Junction Temperature Range

-55 to +175

°C

Thermal Resistance, Junction to Case

6.2

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

40

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD6778A

FDD6778A

D-PAK (TO-252)

13 ’’

12 mm

2500 units