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ST2305AS23RG 데이터시트(PDF) 2 Page - Stanson Technology |
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2 / 6 page ST2305A P Channel Enhancement Mode MOSFET -3.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2305A 2005. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -15 V Gate-Source Voltage VGSS ± 12 V Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID -3.5 -2.8 A Pulsed Drain Current IDM -10 A Continuous Source Current (Diode Conduction) IS -1.6 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 120 ℃ /W |
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