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ST3401 데이터시트(PDF) 1 Page - Stanson Technology |
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ST3401 데이터시트(HTML) 1 Page - Stanson Technology |
1 / 6 page ST3401 P Channel Enhancement Mode MOSFET -4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE - 30V/-4.0A, RDS(ON) = 45mΩ (Typ.) STP3401 2005. V1 3 1 @VGS = -10V -30V/-3.2A, RDS(ON) = 50mΩ @VGS = -4.5V 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Process Code ORDERING INFORMATION Part Number Package Part Marking ST3401S23RG SOT-23-3L A1YA ※ Process Code : A ~ Z ; a ~ z ※ ST3401S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free -30V/-1.2A, RDS(ON) = 60mΩ @VGS = -2.5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design D G S 2 3 1 A1YA 2 |
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