ST3402S23RG datasheet(3/6 Pages) STANSON

부품명	ST3402S23RG

상세설명	N Channel Enhancement Mode MOSFET

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제조업체	STANSON [Stanson Technology]

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3 / 6 page

ST3402

N Channel Enhancement Mode MOSFET

4A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

ST3402 2006. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

30

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250uA

0.8

1.6

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±

100

nA

VDS=24V,VGS=0V

1

Zero Gate Voltage Drain

Current

IDSS

VDS=24V,VGS=0V

TJ=55℃

10

uA

On-State Drain Current

ID(on)

VDS≧4.5V,VGS=4.5V

4

A

Drain-source On-Resistance

RDS(on)

VGS=10V,ID=2.8A

VGS=4.5V,ID=4.5A

VGS=2.5V,ID=1.5A

48

53

80

58

65

105

mΩ

Forward Transconductance

gfs

VDS=4.5V,ID=5.8A

12

S

Diode Forward Voltage

VSD

IS=1.25A,VGS=0V

0.8

1.2

V

Dynamic

Total Gate Charge

Qg

4.2

6

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

VDS=15V

VGS=4.5V

ID≣2.0A

1.5

nC

Input Capacitance

Ciss

350

Output Capacitance

Coss

55

Reverse Transfer Capacitance

Crss

VDS=15V

VGS=0V

F=1MHz

41

pF

2.5

Turn-On Time

td(on)

tr

2.5

20

Turn-Off Time

td(off)

tf

VDD=15V

RL=10Ω

ID=1.0A

VGEN=10V

RG=3Ω

4

nS

유사한 부품 번호 - ST3402S23RG

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VBsemi Electronics Co.,...	ST3402S23RG	482Kb / 9P	N-Channel 30-V (D-S) MOSFET

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ST3402S23RG 데이터시트(PDF) 3 Page - Stanson Technology

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