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STC4516S8TG 데이터시트(PDF) 3 Page - Stanson Technology |
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STC4516S8TG 데이터시트(HTML) 3 Page - Stanson Technology |
3 / 9 page STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) ℃ P-Channel Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -1.0 -3.0 V Gate Leakage Current IGSS VDS=0V,VGS=+20V +100 nA VDS=-30V,VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V TJ=55℃ -5 uA On-State Drain Current ID(on) VDS≥-5V,VGS=-10V -40 A Drain-source On-Resistance RDS(on) VGS=-10V,ID=-7.2A VGS=-4.5V,ID=-5.6A 0.022 0.030 Ω Forward Transconductance gfs VDS=-10V,ID=-7.2A 24 S Diode Forward Voltage VSD IS=-2.3A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 16 Gate-Source Charge Qgs 23 Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID=-7.2A 4.5 nC Input Capacitance Ciss 1650 Output Capacitance Coss 350 Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V f=1MHz 235 pF 16 30 Turn-On Time Td(on) tr 17 30 65 110 Turn-Off Time Td(off) tf VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 35 80 nS |
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